PART |
Description |
Maker |
IRF7413GTRPBF IRF7413GPBF |
Generation V Technology Ultra Low On-Resistance
|
International Rectifier
|
KRF7301 |
Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
KRF7343 |
HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET
|
TY Semicondutor TY Semiconductor Co., Ltd
|
NPT2021 NPT2022 NPT2024 NPA1006 |
Next generation high power RF semiconductor technology
|
M/A-COM Technology Solu...
|
IRF7304PBF IRF7304TRPBF |
Generation V Technology HEXFET Power MOSFET
|
International Rectifier
|
IRF7503 IRF7503TR |
Generation V Technology Power MOSFET(Vdss=30V, Rds(on)=0.135ohm)
|
International Rectifier
|
IRLML5103PBF11 IRLML5103TRPBF |
Lead-Free, Fast Switching, Available in Tape and Reel generation v technology
|
International Rectifier
|
IRF7306 IRF7306TR IRF7306TRPBF |
Generation V Technology -30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
SGB30N6009 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
SGB07N120 SGB07N12007 |
Fast IGBT in NPT-technology lower Eoff compared to previous generation
|
Infineon Technologies AG
|
SGB20N60 SGB20N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|